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SKP253 PDF预览

SKP253

更新时间: 2024-09-19 06:11:51
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
9页 345K
描述
MOS FET

SKP253 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.36
Is Samacsys:N雪崩能效等级(Eas):160 mJ
配置:SINGLE最小漏源击穿电压:250 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.095 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SKP253 数据手册

 浏览型号SKP253的Datasheet PDF文件第2页浏览型号SKP253的Datasheet PDF文件第3页浏览型号SKP253的Datasheet PDF文件第4页浏览型号SKP253的Datasheet PDF文件第5页浏览型号SKP253的Datasheet PDF文件第6页浏览型号SKP253的Datasheet PDF文件第7页 
MOS FET  
SKP253  
December 2005  
Features  
Package---TO-263  
Low on-resistance  
Low input capacitance  
Avalanche energy capability guaranteed  
Applications  
PDP driving  
High speed switching  
Equivalent circuit  
D (2)  
G (1)  
S (3)  
Absolute maximum ratings  
(Ta=25°C)  
Unit  
Characteristic  
Drain to Source Voltage  
Gate to Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
250  
V
V
±30  
±20A  
A
ID(pulse) 1)  
±80A  
A
Maximum Power Dissipation  
Single Pulse Avalanche Energy  
Avalanche Current  
PD  
40 (Tc=25°C)  
160  
W
mJ  
A
EAS 2)  
IAS  
20  
Channel Temperature  
Tch  
150  
°C  
°C  
Storage Temperature  
Tstg  
- 55 to 150  
1) PW100μs, duty cycle1%  
2) VDD=20V, L=740μH, ILp=20A, unclamped, RG=50. See Fig.1  
.
Sanken Electric Co.,Ltd.  
http://www.sanken-ele.co.jp/en/  
T02-004EA-051124  
1/9  

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