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SKP202 PDF预览

SKP202

更新时间: 2024-11-08 06:11:51
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 295K
描述
N-Channel MOS FET

SKP202 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:TO-263, 3 PIN针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
雪崩能效等级(Eas):200 mJ配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):45 A
最大漏源导通电阻:0.053 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SKP202 数据手册

 浏览型号SKP202的Datasheet PDF文件第2页浏览型号SKP202的Datasheet PDF文件第3页浏览型号SKP202的Datasheet PDF文件第4页浏览型号SKP202的Datasheet PDF文件第5页浏览型号SKP202的Datasheet PDF文件第6页浏览型号SKP202的Datasheet PDF文件第7页 
N-Channel MOS FET  
SKP202  
March. 2007  
Features  
Package---TO-263  
Low on-resistance  
Low input capacitance  
Avalanche energy capability guaranteed  
Applications  
PDP driving  
High speed switching  
Equivalent circuit  
D (2)  
G (1)  
S (3)  
Absolute maximum ratings  
(Ta=25°C)  
Parameter  
Symbol  
Rating  
200  
Unit  
Drain to Source Voltage  
Gate to Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
VDSS  
VGSS  
ID  
V
V
±30  
±45A  
A
ID(pulse) *1  
PD  
±180A  
95 (Tc=25°C)  
200  
A
Maximum Power Dissipation  
Single Pulse Avalanche Energy  
Avalanche Current  
W
mJ  
A
EAS *2  
IAS  
45  
Channel Temperature  
Tch  
150  
°C  
°C  
Storage Temperature  
Tstg  
55 to 150  
*1 PW100μsduty cycle%  
*2 VDD=20V, L=180μHILp=45A, unclamped, RG=50, See Fig.1  
Sanken Electric Co., Ltd.  
http://www.sanken-ele.co.jp/en/  
T02-007EA-070227  
1/9  

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