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SKKT118B18EG6 PDF预览

SKKT118B18EG6

更新时间: 2024-11-06 21:16:47
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赛米控丹佛斯 - SEMIKRON 局域网栅极
页数 文件大小 规格书
4页 312K
描述
Silicon Controlled Rectifier, 186.83A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, SEMIPACK-7

SKKT118B18EG6 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X7
针数:7Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.84
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:100 mA
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:130 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:186.83 A
断态重复峰值电压:1800 V重复峰值反向电压:1800 V
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

SKKT118B18EG6 数据手册

 浏览型号SKKT118B18EG6的Datasheet PDF文件第2页浏览型号SKKT118B18EG6的Datasheet PDF文件第3页浏览型号SKKT118B18EG6的Datasheet PDF文件第4页 
SKKT 118B18 E G6  
Absolute Maximum Ratings  
Symbol Conditions  
Chip  
Values  
Unit  
Tc = 85 °C  
Tc = 100 °C  
Tj = 25 °C  
Tj = 130 °C  
Tj = 25 °C  
Tj = 130 °C  
IT(AV)  
119  
91  
A
A
sinus 180°  
ITSM  
2250  
1900  
25313  
18050  
1900  
1800  
1800  
140  
A
10 ms  
A
i2t  
kA2s  
kA2s  
V
10 ms  
i2t  
SEMIPACK® 1  
VRSM  
VRRM  
VDRM  
V
V
Thyristor Modules  
SKKT 118B18 E G6  
Features  
Tj = 130 °C  
Tj = 130 °C  
(di/dt)cr  
(dv/dt)cr  
Tj  
A/µs  
V/µs  
°C  
1000  
-40 ... 130  
Module  
Tstg  
-40 ... 125  
3000  
°C  
V
1 min  
1 s  
Visol  
a.c.; 50 Hz; r.m.s.  
• Heat transfer through aluminium oxide  
ceramic isolated metal baseplate  
3600  
V
• Hard soldered joints for high reliability  
• UL recognized, file no. E63532  
Characteristics  
Symbol Conditions  
Chip  
min.  
typ.  
max.  
Unit  
Typical Applications  
• DC motor control (e. g. for machine  
tools)  
• AC motor soft starters  
• Temperature control (e. g. for ovens,  
chemical processes)  
• Professional light dimming (studios,  
theaters)  
Tj = 25 °C, IT = 300 A  
VT  
1.6  
0.8  
1.75  
0.9  
V
Tj = 130 °C  
Tj = 130 °C  
VT(TO)  
rT  
IDD;IRD  
tgd  
V
2.80  
3.35  
20  
m  
mA  
µs  
Tj = 130 °C, VDD = VDRM; VRD = VRRM  
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs  
VD = 0.67 * VDRM  
1
tgr  
2
µs  
Tj = 130 °C  
tq  
200  
150  
300  
µs  
Tj = 25 °C  
IH  
250  
600  
mA  
mA  
V
Tj = 25 °C, RG = 33 Ω  
Tj = 25 °C, d.c.  
IL  
VGT  
IGT  
2.5  
Tj = 25 °C, d.c.  
100  
mA  
V
Tj = 130 °C, d.c.  
VGD  
IGD  
Rth(j-c)  
0.25  
4
Tj = 130 °C, d.c.  
mA  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
per chip  
0.190  
0.095  
0.200  
0.100  
0.210  
0.105  
cont.  
per module  
per chip  
sin. 180°  
Rth(j-c)  
Rth(j-c)  
per module  
per chip  
rec. 120°  
per module  
Module  
Rth(c-s)  
chip  
0.22  
0.11  
K/W  
K/W  
Nm  
module  
Ms  
Mt  
a
to heatsink M5  
to terminals M5  
4.25  
2.55  
5.75  
3.45  
Nm  
5 * 9,81 m/s2  
w
75  
g
SKKT  
© by SEMIKRON  
Rev. 0 – 19.01.2009  
1

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