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SKIIP613GD121-3DUW PDF预览

SKIIP613GD121-3DUW

更新时间： 2024-11-21 20:52:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
1页 200K
描述
Half Bridge Based Peripheral Driver, 3000A

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SKIIP613GD121-3DUW 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVERJESD-30 代码：R-XXMA-X
JESD-609代码：e3/e4功能数量：3
输出电流流向：SOURCE AND SINK标称输出峰值电流：3000 A
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：NO
端子面层：TIN/SILVER端子形式：UNSPECIFIED
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SKIIP613GD121-3DUW 数据手册

  
SKiiP 613GD121-3DUL  
I. Power section 1 * SKiiP613GB121CT per phase  
Absolute maximum ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
Symbol Conditions 1)  
Values  
Units  
IGBT and inverse diode  
VCES  
3rd Generation  
6-pack  
1200  
900  
± 20  
V
V
V
A
A
A
A
A
VCC  
VGES  
IC  
ICM  
IF  
Operating DC link voltage  
SKiiP 613GD121-3DUL 3)  
IGBT, Theat sink = 25 / 70 °C  
IGBT, tp < 1 ms,Theat sink = 25°C  
Diode, Theat sink = 25 / 70 °C  
Diode, tp < 1 ms  
600 / 450  
1200  
450 / 337,5  
900  
Target data  
IFM  
IFSM  
housing S33  
Diode, Tj = 150 °C, 10ms; sin  
4320  
93  
-40...+150 (125)  
3000  
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Tj , (Tstg)  
kA2s  
°C  
V
Visol  
IC-package  
AC, 1min.  
Theat sink = 70°C, Tterm = 115 °C  
4)  
1 * 500  
A
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
IGBT  
V(BR)CES  
gate driver without supply  
V
mA  
mA  
V
mΩ  
V
V
mJ  
mJ  
≥VCES  
−
1,2  
36  
0,9  
2,71  
2,3  
−
172  
279  
−
−
−
−
−
−
2
Features  
• SKiiP technology inside  
VGE = 0,  
Tj = 25 °C  
−
−
−
−
−
−
ICES  
VCE = VCES  
Tj = 125 °C  
7)  
pressure contact of ceramic  
to heat sink; low thermal  
impedance  
-
VCEO  
rT  
Tj = 125 °C  
Tj = 125 °C  
IC = 490A,  
IC = 490A,  
IC=490A,  
7)  
7)  
VCEsat  
Tj = 125 °C  
Tj = 25 °C  
VCC=600V  
VCC=900V  
7)  
pressure contact of main  
electric terminals  
pressure contact of auxiliary  
electric terminals  
increased thermal cycling  
capability  
-
-
-
VCEsat  
5)  
Eon + Eoff  
−
−
Tj = 125 °C  
C
LCE  
per SKiiP, AC side  
top, bottom  
1
12  
nF  
nH  
−
−
−
−
RCC´-EE´  
resistance, terminal-chip  
0,40  
mΩ  
low stray inductance  
homogenous current  
distribution  
-
-
Inverse diode 2)  
VF = VEC IF= 450A;  
VF= VEC  
Eon + Eoff IF= 450A;  
VTO  
rT  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
1,8  
−
18  
1,0  
1,83  
V
V
mJ  
V
−
−
−
−
−
−
2,5  
−
−
−
IF= 450A;  
• integrated current sensor  
• integrated temperature sensor  
• high power density  
5)  
Tj = 125 °C  
Tj = 125 °C  
mΩ  
1)  
Theatsink = 25 °C, unless  
otherwise specified  
CAL = Controlled Axial Lifetime  
Technology (soft and fast)  
Thermal characteristics  
2)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per diode  
0,071  
0,125  
0,033  
0,010  
°C/W  
°C/W  
°C/W  
°C/W  
−
−
−
−
−
−
−
−
3)  
L: P16 heat sink; 280 m3/ h  
W: WK 40; 8l/min; 50% glycol  
3)  
D integrated gate driver  
U with DC-bus voltage  
measurement (option for GB)  
L mounted on standard P16 for  
forced air cooling  
W mounted on standard water  
cooler  
Current sensor  
Ip RMS  
Ipmax RMS  
1 * 400  
1 * 500  
A
A
Ta=100° C , Vsupply = ± 15V  
t ≤ 2 s  
V
supply ≥ ±14,25V, 0≤I≤ ± 700A,  
Linearity  
0,1  
%
A
4)  
per sensor  
Tterm = temperature of terminal  
with SKiiPPACK 3rd generation  
5)  
Ippeak  
t ≤ 10 µs, per sensor  
± 3000  
gate driver  
assembly instruction must be  
followed  
measured at chip level  
Mechanical data  
6)  
M1  
M2  
M3  
DC terminals, SI Units  
AC terminals, SI Units  
to heat sink 6)  
4
8
−
6
10  
−
Nm  
Nm  
Nm  
−
−
3
7)  
8)  
external paralleling necessary  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,  
expressed or implied is made regarding delivery, performance or suitability.  
B 7 − 10  
000911  
by SEMIKRON  
1

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