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SKIIP642GB120-208CTVF PDF预览

SKIIP642GB120-208CTVF

更新时间： 2024-11-19 14:31:03
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
1页 14K
描述
Half Bridge Based Peripheral Driver, 750A

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SKIIP642GB120-208CTVF 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
Is Samacsys：N内置保护：TRANSIENT; OVER CURRENT; THERMAL
接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVERJESD-30 代码：R-XXMA-X
功能数量：1最高工作温度：85 °C
最低工作温度：-25 °C输出电流流向：SOURCE AND SINK
标称输出峰值电流：750 A封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
认证状态：Not Qualified标称供电电压：15 V
表面贴装：NO温度等级：OTHER
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
Base Number Matches：1

SKIIP642GB120-208CTVF 数据手册

  
SKiiP 642 GB 120 - 208 CTV  
Absolute Maximum Ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
halfbridge  
Symbol Conditions1)  
Values  
3000  
Units  
V
4)  
Visol  
AC, 1min  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
SKiiP  
642 GB 120 - 208 CTV 7,9)  
IGBT and Inverse Diode  
VCES  
1200  
900  
600  
V
V
A
°C  
A
Preliminary Data  
Case S2  
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
3)  
-40...+150  
600  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
1200  
4320  
93  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
20  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT11)  
V(BR)CES  
• Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
≥VCES  
−
−
−
−
30  
−
0,8  
−
ICES  
VGE = 0,  
Tj = 25 °C  
Tj = 125 °C  
VCE = VCES  
• Isolated power supply  
• Low thermal impedance  
• Optimal thermal management  
with integrated heatsink  
• Pressure contact technology  
with increased power cycling  
capability, compact design  
• Low stray inductance  
• High power, small losses  
• Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 500A,  
IC = 500A,  
1,38  
3,7  
3,2  
3,05  
180/293  
V
mΩ  
V
V
mJ  
−
−
−
−
−
−
−
−
−
−
Tj = 125 °C  
Tj = 25 °C  
Eon + Eoff VCC=600/900V,IC=600A  
Tj = 125 °C  
CCHC  
LCE  
per SkiiP, AC side  
Top, Bottom  
2,8  
7,5  
nF  
nH  
−
−
−
−
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
VF = VEC IF= 500A;  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
2,43  
2,55  
24  
V
V
mJ  
V
−
−
−
−
−
−
−
−
0,91  
1,9  
otherwise specified  
CAL = Controlled Axial Lifetime  
VF= VEC  
IF= 500A;  
2)  
Eon + Eoff IF= 600A;  
Technology (soft and fast)  
without driver  
Driver input to DC link/ AC  
3)  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
−
−
4)  
mΩ  
output to heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
AC connection busbars must be  
Thermal Characteristics  
10)  
5)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case S2  
0,045  
0,125  
0,044  
°C/W  
°C/W  
°C/W  
−
−
−
−
−
−
10)  
6)  
6,10)  
7)  
Driver  
IS1  
IS2  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
210+430*fs /fsmax+1,3*IAC/A  
160+290*fs /fsmax+1,0*IAC/A  
3,3  
mA  
mA  
µs  
8)  
tinterlock-driver  
connected by the user; copper  
busbars available on request  
options available for driver:  
U - DC link voltage sense  
F – Fiber optic connector  
“s” referenced to temperature  
sensor  
NPT-technology with homo-  
genous current-distribution  
SKiiPPACK protection  
9)  
ITRIPSC  
ITRIPLG  
TTRIP  
Short circuit protection  
A
A
°C  
V
750 ± 2%  
-
Ground fault protection  
Over-temp. protection  
UDC-protection  
115 ± 5%  
920 ± 2%  
10)  
9)  
UDCTRIP  
11)  
Mechanical Data  
M1  
DC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
−
−
M2  
AC terminals, SI Units  
by SEMIKRON  
28.01.99  
1

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