5秒后页面跳转
捷配首页

Datasheet > SKIIP613GD121-3DW
SKIIP613GD121-3DW PDF预览

SKIIP613GD121-3DW

更新时间： 2024-11-21 20:52:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
1页 200K
描述
Half Bridge Based Peripheral Driver, 3000A

阅读下载

中文翻译

获取价格

SKIIP613GD121-3DW 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVERJESD-30 代码：R-XXMA-X
JESD-609代码：e3/e4功能数量：3
输出电流流向：SOURCE AND SINK标称输出峰值电流：3000 A
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：NO
端子面层：TIN/SILVER端子形式：UNSPECIFIED
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SKIIP613GD121-3DW 数据手册

  
SKiiP 613GD121-3DUL  
I. Power section 1 * SKiiP613GB121CT per phase  
Absolute maximum ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
Symbol Conditions 1)  
Values  
Units  
IGBT and inverse diode  
VCES  
3rd Generation  
6-pack  
1200  
900  
± 20  
V
V
V
A
A
A
A
A
VCC  
VGES  
IC  
ICM  
IF  
Operating DC link voltage  
SKiiP 613GD121-3DUL 3)  
IGBT, Theat sink = 25 / 70 °C  
IGBT, tp < 1 ms,Theat sink = 25°C  
Diode, Theat sink = 25 / 70 °C  
Diode, tp < 1 ms  
600 / 450  
1200  
450 / 337,5  
900  
Target data  
IFM  
IFSM  
housing S33  
Diode, Tj = 150 °C, 10ms; sin  
4320  
93  
-40...+150 (125)  
3000  
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Tj , (Tstg)  
kA2s  
°C  
V
Visol  
IC-package  
AC, 1min.  
Theat sink = 70°C, Tterm = 115 °C  
4)  
1 * 500  
A
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
IGBT  
V(BR)CES  
gate driver without supply  
V
mA  
mA  
V
mΩ  
V
V
mJ  
mJ  
≥VCES  
−
1,2  
36  
0,9  
2,71  
2,3  
−
172  
279  
−
−
−
−
−
−
2
Features  
• SKiiP technology inside  
VGE = 0,  
Tj = 25 °C  
−
−
−
−
−
−
ICES  
VCE = VCES  
Tj = 125 °C  
7)  
pressure contact of ceramic  
to heat sink; low thermal  
impedance  
-
VCEO  
rT  
Tj = 125 °C  
Tj = 125 °C  
IC = 490A,  
IC = 490A,  
IC=490A,  
7)  
7)  
VCEsat  
Tj = 125 °C  
Tj = 25 °C  
VCC=600V  
VCC=900V  
7)  
pressure contact of main  
electric terminals  
pressure contact of auxiliary  
electric terminals  
increased thermal cycling  
capability  
-
-
-
VCEsat  
5)  
Eon + Eoff  
−
−
Tj = 125 °C  
C
LCE  
per SKiiP, AC side  
top, bottom  
1
12  
nF  
nH  
−
−
−
−
RCC´-EE´  
resistance, terminal-chip  
0,40  
mΩ  
low stray inductance  
homogenous current  
distribution  
-
-
Inverse diode 2)  
VF = VEC IF= 450A;  
VF= VEC  
Eon + Eoff IF= 450A;  
VTO  
rT  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
1,8  
−
18  
1,0  
1,83  
V
V
mJ  
V
−
−
−
−
−
−
2,5  
−
−
−
IF= 450A;  
• integrated current sensor  
• integrated temperature sensor  
• high power density  
5)  
Tj = 125 °C  
Tj = 125 °C  
mΩ  
1)  
Theatsink = 25 °C, unless  
otherwise specified  
CAL = Controlled Axial Lifetime  
Technology (soft and fast)  
Thermal characteristics  
2)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per diode  
0,071  
0,125  
0,033  
0,010  
°C/W  
°C/W  
°C/W  
°C/W  
−
−
−
−
−
−
−
−
3)  
L: P16 heat sink; 280 m3/ h  
W: WK 40; 8l/min; 50% glycol  
3)  
D integrated gate driver  
U with DC-bus voltage  
measurement (option for GB)  
L mounted on standard P16 for  
forced air cooling  
W mounted on standard water  
cooler  
Current sensor  
Ip RMS  
Ipmax RMS  
1 * 400  
1 * 500  
A
A
Ta=100° C , Vsupply = ± 15V  
t ≤ 2 s  
V
supply ≥ ±14,25V, 0≤I≤ ± 700A,  
Linearity  
0,1  
%
A
4)  
per sensor  
Tterm = temperature of terminal  
with SKiiPPACK 3rd generation  
5)  
Ippeak  
t ≤ 10 µs, per sensor  
± 3000  
gate driver  
assembly instruction must be  
followed  
measured at chip level  
Mechanical data  
6)  
M1  
M2  
M3  
DC terminals, SI Units  
AC terminals, SI Units  
to heat sink 6)  
4
8
−
6
10  
−
Nm  
Nm  
Nm  
−
−
3
7)  
8)  
external paralleling necessary  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,  
expressed or implied is made regarding delivery, performance or suitability.  
B 7 − 10  
000911  
by SEMIKRON  
1

中文翻译

下载PDF

与SKIIP613GD121-3DW相关器件

型号 品牌 获取价格 描述 数据表
SKIIP613GD123-3DUL SEMIKRON

获取价格

 		6-pack-integrated intelligent Power System
SKIIP613GD123-3DUL_09 SEMIKRON

获取价格

 		6-pack-integrated intelligent Power System
SKIIP632GB120-3D SEMIKRON

获取价格

 		2-pack - integrated intelligent Power System
SKIIP632GB120-3D_07 SEMIKRON

获取价格

 		2-pack - integrated intelligent Power System
SKIIP642GB120-208CTV SEMIKRON

获取价格

 		Half Bridge Based Peripheral Driver, 0.005A
SKIIP642GB120-208CTVF SEMIKRON

获取价格

 		Half Bridge Based Peripheral Driver, 750A
SKIIP642GB120-208CTVU SEMIKRON

获取价格

 		Half Bridge Based Peripheral Driver, 750A
SKIIP642GB120-2D SEMIKRON

获取价格

 		2-pack - integrated intelligent Power System
SKIIP642GB120-2D_07 SEMIKRON

获取价格

 		2-pack - integrated intelligent Power System
SKIIP642GH120-2208CTV SEMIKRON

获取价格

 		Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES

与SKIIP613GD121-3DW相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证