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SKIIP342GDL120-411CTVFA PDF预览

SKIIP342GDL120-411CTVFA

更新时间: 2024-11-13 19:22:11
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
2页 29K
描述
Full Bridge Based Peripheral Driver, 375A

SKIIP342GDL120-411CTVFA 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
内置保护:TRANSIENT; OVER CURRENT; THERMAL接口集成电路类型:FULL BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码:R-XXMA-X功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
输出电流流向:SOURCE AND SINK标称输出峰值电流:375 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
标称供电电压:15 V表面贴装:NO
温度等级:OTHER端子形式:UNSPECIFIED
端子位置:UNSPECIFIEDBase Number Matches:1

SKIIP342GDL120-411CTVFA 数据手册

 浏览型号SKIIP342GDL120-411CTVFA的Datasheet PDF文件第2页 
SKiiP 3-phase bridge  
SKiiPPACK  
Absolute Maximum Ratings  
SK integrated intelligent  
Power PACK  
Symbol Conditions1)  
Values  
3000  
Units  
V
4)  
Visol  
AC, 1min  
3-phase bridge with  
brake chopper (E/A)  
SKiiP  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
IGBT and Inverse Diode  
VCES  
342 GDL 120 - 411 CTV 7,9)  
1200  
900  
300  
V
V
A
°C  
A
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
Preliminary Data  
Case S5GDL  
3)  
-40...+150  
300  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
600  
2160  
23  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
20  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT11)  
V(BR)CES  
Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
VCES  
15  
0,4  
ICES  
VGE = 0,  
Tj = 25 °C  
Tj = 125 °C  
VCE = VCES  
Isolated power supply  
Low thermal impedance  
Optimal thermal management  
with integrated heatsink  
Pressure contact technology  
with increased power cycling  
capability, compact design  
Low stray inductance  
High power, small losses  
Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 250A,  
IC = 250A,  
1,38  
7,4  
3,2  
3,05  
90/146  
V
mΩ  
V
V
mJ  
Tj = 125 °C  
Tj = 25 °C  
Eon + Eoff VCC=600/900V,IC=300A  
Tj = 125 °C  
CCHC  
LCE  
per SkiiP, AC side  
Top, Bottom  
1,4  
15  
nF  
nH  
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
VF = VEC IF= 250A;  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
2,43  
2,55  
12  
V
V
mJ  
V
0,91  
3,8  
otherwise specified  
CAL = Controlled Axial Lifetime  
VF= VEC  
IF= 250A;  
2)  
Eon + Eoff IF= 300A;  
Technology (soft and fast)  
without driver  
Driver input to DC link/ AC  
3)  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
4)  
mΩ  
output to heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
options available for driver:  
Thermal Characteristics  
10)  
5)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case  
0,090  
0,250  
0,033  
°C/W  
°C/W  
°C/W  
10)  
6)  
6,10)  
7)  
Driver  
IS1  
IS2  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
340+490*fs /fsmax+3,5*IAC/A  
250+360*fs /fsmax+2,6*IAC/A  
2,3  
mA  
mA  
µs  
9)  
tinterlock-driver  
U - DC link voltage sense  
F – Fiber optic connector  
s” referenced to temperature  
sensor  
NPT-technology with homo-  
genous current-distribution  
SKiiPPACK protection  
10)  
ITRIPSC  
ITRIPLG  
TTRIP  
Short circuit protection  
A
A
°C  
V
375 ± 2%  
87 +/- 2%  
115 ± 5%  
920 ± 2%  
Ground fault protection  
Over-temp. protection  
UDC-protection  
11)  
9)  
UDCTRIP  
Mechanical Data  
M1  
DC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
M2  
AC terminals, SI Units  
28.01.99  
by SEMIKRON  

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