生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
内置保护: | TRANSIENT; OVER CURRENT; THERMAL | 接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-XXMA-X | 功能数量: | 1 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
输出电流流向: | SOURCE AND SINK | 标称输出峰值电流: | 375 A |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 认证状态: | Not Qualified |
表面贴装: | NO | 温度等级: | OTHER |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP34NAB12T4V1 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PI | |
SKIIP35NAB126V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP35NAB126V10 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor | |
SKIIP35NAB12T4V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP3614GB12E4-6DUW | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 4660A I(C), 1200V V(BR)CES | |
SKIIP362GD060352W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GD060352WT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GD060-352WT | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, | |
SKIIP362GDL060453W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GDL060453WT | SEMIKRON |
获取价格 |
Large IGBT Power Packs |