是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | FLANGE MOUNT, R-XUFM-X68 |
针数: | 68 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.69 |
其他特性: | UL RECOGNIZED, FAST | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 73 A | 集电极-发射极最大电压: | 1200 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X68 | JESD-609代码: | e3/e4 |
元件数量: | 7 | 端子数量: | 68 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | TIN/SILVER |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 520 ns |
标称接通时间 (ton): | 115 ns | VCEsat-Max: | 2.1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP35NAB126V10 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor | |
SKIIP35NAB12T4V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP3614GB12E4-6DUW | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 4660A I(C), 1200V V(BR)CES | |
SKIIP362GD060352W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GD060352WT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GD060-352WT | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, | |
SKIIP362GDL060453W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GDL060453WT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GDL060-453WT | SEMIKRON |
获取价格 |
Half Bridge Based Peripheral Driver, 10A | |
SKIIP36NAB126V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter |