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SKIIP3614GB12E4-6DUW PDF预览

SKIIP3614GB12E4-6DUW

更新时间: 2024-11-13 21:21:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON
页数 文件大小 规格书
8页 443K
描述
Insulated Gate Bipolar Transistor, 4660A I(C), 1200V V(BR)CES

SKIIP3614GB12E4-6DUW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.73最大集电极电流 (IC):4660 A
集电极-发射极最大电压:1200 V元件数量:1
最高工作温度:175 °C子类别:Insulated Gate BIP Transistors
VCEsat-Max:2.26 VBase Number Matches:1

SKIIP3614GB12E4-6DUW 数据手册

 浏览型号SKIIP3614GB12E4-6DUW的Datasheet PDF文件第2页浏览型号SKIIP3614GB12E4-6DUW的Datasheet PDF文件第3页浏览型号SKIIP3614GB12E4-6DUW的Datasheet PDF文件第4页浏览型号SKIIP3614GB12E4-6DUW的Datasheet PDF文件第5页浏览型号SKIIP3614GB12E4-6DUW的Datasheet PDF文件第6页浏览型号SKIIP3614GB12E4-6DUW的Datasheet PDF文件第7页 
SKiiP 3614 GB12E4-6DUW  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
System  
1)  
VCC  
Operating DC link voltage  
DC, t = 1 s, each polarity  
per AC terminal, rms, sinusoidal current  
max. peak current of power section  
Tj = 175 °C, tp = 10 ms, sin 180°  
Tj = 175 °C, tp = 10 ms, diode  
900  
4300  
500  
5400  
16547  
1369  
V
V
A
A
A
Visol  
It(RMS)  
Imax (peak)  
IFSM  
I²t  
kA²s  
SKiiP® 4  
fundamental output frequency  
(sinusoidal)  
storage temperature  
fout  
1
kHz  
°C  
Tstg  
-40 ... 85  
2-pack-integrated intelligent  
Power System  
IGBT  
VCES  
IC  
Tj = 25 °C  
Ts = 25 °C  
Tj = 175 °C  
1200  
4664  
3792  
3600  
-40 ... 175  
V
A
A
A
°C  
Ts = 70 °C  
SKiiP 3614 GB12E4-6DUW  
ICnom  
Tj2)  
junction temperature  
Diode  
VRRM  
IF  
Features  
• Intelligent Power Module  
• Integrated current and temperature  
measurement  
Tj = 25 °C  
Ts = 25 °C  
Tj = 175 °C  
1200  
3558  
2821  
3600  
-40 ... 175  
V
A
A
A
°C  
Ts = 70 °C  
• Integrated DC-link measurement  
• Solder free power section  
• IGBT4 and CAL4F technology  
• Tjmax = 175°C  
IFnom  
Tj2)  
junction temperature  
Driver  
V s  
ViH  
dv/dt  
fsw  
• Safety isolated switching and sensor  
signals  
power supply  
19.2 ... 28.8  
Vs + 0.3  
V
V
kV/µs  
kHz  
input signal voltage (high)  
secondary to primary side  
switching frequency  
• Digital signal transmission  
• 100% tested IPM  
75  
5
• RoHS compliant  
• UL recognition in progress, file no.  
E242581  
Characteristics  
Typical Applications*  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Renewable energies  
• Traction  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE(sat)  
2.01  
2.49  
0.80  
0.70  
0.34  
0.50  
1405  
2520  
2.26  
2.69  
0.90  
0.80  
0.38  
0.53  
V
V
V
IC = 3600 A  
at terminal  
• Elevators  
• Industrial drives  
VCE0  
Remarks  
For further information please refer to SKiiP®4  
Technical Explanation  
V
rCE  
m  
m  
mJ  
mJ  
K/W  
K/W  
at terminal  
V
V
CC = 600 V  
CC = 900 V  
Eon + Eoff  
Footnotes  
IC = 3600 A  
Tj = 150 °C  
1) With assembly of suitable MKP capacitor per  
terminal  
Rth(j-s)  
Rth(j-r)  
per IGBT switch  
per IGBT switch  
0.0106  
0.0077  
2) The specified maximum operation junction  
temperature Tvjop is 150°C  
S64  
© by SEMIKRON  
Rev. 2 – 22.03.2013  
1

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