是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 最大集电极电流 (IC): | 4660 A |
集电极-发射极最大电压: | 1200 V | 元件数量: | 1 |
最高工作温度: | 175 °C | 子类别: | Insulated Gate BIP Transistors |
VCEsat-Max: | 2.26 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP362GD060352W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GD060352WT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GD060-352WT | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, | |
SKIIP362GDL060453W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GDL060453WT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP362GDL060-453WT | SEMIKRON |
获取价格 |
Half Bridge Based Peripheral Driver, 10A | |
SKIIP36NAB126V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP36NAB126V1_09 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP37AC125V10 | SEMIKRON |
获取价格 |
3-phase bridge inverter | |
SKIIP37AC125V20 | SEMIKRON |
获取价格 |
3-phase bridge inverter |