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SKiiP 22GB17E4V1 PDF预览

SKiiP 22GB17E4V1

更新时间: 2024-11-25 14:50:59
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
6页 377K
描述
IGBT Modules MiniSKiiP II 2 (59x52x16)

SKiiP 22GB17E4V1 数据手册

 浏览型号SKiiP 22GB17E4V1的Datasheet PDF文件第2页浏览型号SKiiP 22GB17E4V1的Datasheet PDF文件第3页浏览型号SKiiP 22GB17E4V1的Datasheet PDF文件第4页浏览型号SKiiP 22GB17E4V1的Datasheet PDF文件第5页浏览型号SKiiP 22GB17E4V1的Datasheet PDF文件第6页 
SKiiP 22GB17E4V1  
Absolute Maximum Ratings  
Symbol Conditions  
Inverter - IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1700  
117  
95  
100  
300  
V
A
A
A
A
V
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
-20 ... 20  
MiniSKiiP® 2 Dual  
Half-Bridge  
VCC = 1000 V  
V
V
GE 15 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
CES 1700 V  
Tj  
-40 ... 175  
Inverse - Diode  
Ts = 25 °C  
Ts = 70 °C  
IF  
91  
71  
A
A
Tj = 175 °C  
SKiiP 22GB17E4V1  
IFRM  
IFSM  
Tj  
200  
580  
-40 ... 175  
A
A
°C  
10 ms, sin 180°, Tj = 150 °C  
Features*  
• Trench IGBTs  
Module  
It(RMS)  
Tstg  
• Robust and soft freewheeling diodes in  
CAL technology  
Tterminal = 80 °C, 20 A per spring  
module without TIM  
AC sinus 50 Hz, t = 1 min  
200  
-40 ... 125  
2500  
A
°C  
V
• Highly reliable spring contacts for  
electrical connections  
Visol  
• UL recognised: File no. E63532  
• NTC T-Sensor  
Characteristics  
Symbol Conditions  
Inverter - IGBT  
min.  
typ.  
max.  
Unit  
Remarks  
• Max. case temperature limited to  
TC=125°C  
IC = 100 A  
Tj = 25 °C  
VCE(sat)  
1.90  
2.30  
2.20  
2.60  
V
V
V
GE = 15 V  
• Product reliability results valid for  
Tj150°C (recommended  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.80  
0.70  
11  
16  
5.8  
0.90  
0.80  
13  
18  
6.4  
0.3  
V
V
mΩ  
mΩ  
V
mA  
mA  
nF  
nF  
nF  
nC  
Ω
T
j,op=-40...+150°C)  
chiplevel  
• The creepage distance between  
T-Sensor and ground is 8mm  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
VGE = VCE, IC = 4 mA  
Tj = 25 °C  
V
5.2  
VGE = 0 V  
CE = 1700 V  
-
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
8.00  
0.34  
0.29  
800  
7.5  
232  
41  
22.2  
600  
144  
VCE = 25 V  
GE = 0 V  
V
- 8 V...+ 15 V  
Tj = 25 °C  
VCC = 900 V  
ns  
I
C = 100 A  
ns  
mJ  
ns  
R
R
G on = 2 Ω  
G off = 2 Ω  
di/dton = 2892 A/µs  
di/dtoff = 665 A/µs  
dv/dt = 5490 V/µs  
ns  
V
GE = +15/-15 V  
Eoff  
30.7  
0.43  
mJ  
Ls = 25 nH  
per IGBT, λpaste=0.8 W/(K*m)  
Rth(j-s)  
K/W  
GB  
© by SEMIKRON  
Rev. 1.0 – 24.09.2021  
1

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