Datasheet > SKiiP 23AC12T4V1

SKiiP 23AC12T4V1

更新时间： 2023-12-06 20:07:54

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	412K
描述
IGBT Modules MiniSKiiP II 2 (59x52x16)

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SKiiP 23AC12T4V1 数据手册

SKiiP 23AC12T4V1

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

MiniSKiiP^®2

Sixpack

V_CC= 800 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

SKiiP 23AC12T4V1

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

1200

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Features*

• Trench 4 IGBTs

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Robust and soft switching freewheeling

diodes in CAL technology

I_FRM

I_FSM

T_j

• Highly reliable spring contacts for

electrical connections

t_p= 10 ms, sin 180°, T_j= 150 °C

100

• UL recognized: File no. E63532

-40 ... 175

°C

Module

I_t(RMS)

T_stg

Remarks

T_terminal= 80 °C, 20 A per spring

module without TIM

AC sinus 50 Hz, t = 1 min

100

-40 ... 125

2500

°C

• Max. case temperature limited to

T_C=125°C

V_isol

• Product reliability results valid for

T_j≤150°C (recommended

Characteristics

_j,op=-40...+150°C)

• MiniSKiiP “Technical Explanations”

and “Mounting Instructions” are part of

the data sheet. Please refer to both

documents for further information

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

I_C= 25 A

T_j= 25 °C

V_CE(sat)

1.85

2.25

2.10

2.45

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

5.8

0.90

0.80

6.3

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE= V_CE, I_C= 1 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.3

1.45

0.12

0.05

142

3.7

330

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 25 A

_{G on}= 39 Ω

_{G off}= 39 Ω

E_on

t_d(off)

t_f

di/dt_on= 465 A/µs

di/dt_off= 350 A/µs

V_GE= +15/-15 V

T_j= 150 °C

E_off

2.4

per IGBT, λ_paste=0.8 W/(mK)

per IGBT, λ_paste=2.5 W/(mK)

R_th(j-s)

0.83

K/W

Rev. 5.0 – 23.09.2021

12 3 4 5 6

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