Datasheet > SKiiP 23AC12T7V1

SKiiP 23AC12T7V1

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
7页	946K
描述
IGBT Modules MiniSKiiP II 2 (59x52x16)

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SKiiP 23AC12T7V1 数据手册

SKiiP 23AC12T7V1

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

MiniSKiiP^®2

Sixpack

V_CC= 800 V

_GE≤ 15 V

T_j= 175 °C

t_psc

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

SKiiP 23AC12T7V1

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

1200

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Features*

• 1200V Generation 7 IGBTs (T7)

• Robust and soft switching freewheeling

diodes in CAL technology

• Highly reliable spring contacts for

electrical connections

• UL recognized: File no. E63532

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 150 °C

100

-40 ... 175

°C

Module

I_t(RMS)

T_stg

T_terminal= 80 °C, 20 A per spring

module without TIM

AC sinus 50 Hz, t = 1 min

100

-40 ... 125

2500

°C

Remarks

• Max. case temperature limited to

TC=TS=125 °C

V_isol

• Product reliability results valid for

Tj≤150 °C; Tj,op >150°C during

overload (Details see AN19-002)

• MiniSKiiP ″Technical Explanations″

and ″Mounting Instructions″ are part of

the data sheet. Please refer to both

documents for further information.

• For storage and case temperature with

TIM see document ″Technical

Explanations Thermal Interface

Materials″

Characteristics

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

T_j= 25 °C

T_j= 150 °C

T_j= 175 °C

T_j= 25 °C

T_j= 150 °C

T_j= 175 °C

T_j= 25 °C

T_j= 150 °C

T_j= 175 °C

V_CE(sat)

V_CE0

r_CE

1.60

1.78

1.82

1.00

0.80

0.75

5.8

1.75

1.93

1.97

1.05

0.85

0.80

6.45

I_C= 25 A

_GE= 15 V

chiplevel

mΩ

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

V_GE= V_CE, I_C= 0.53 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.15

4.80

0.06

0.02

350

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8V ... + 15 V

T_j= 25 °C

R_Gint

Rev. 2.0 – 23.07.2021

12 3 4 5 6 7

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