Datasheet > SiSS5810DN

SiSS5810DN

更新时间： 2024-04-09 19:02:26

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	235K
描述
N-Channel 80 V (D-S) MOSFET

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SiSS5810DN 数据手册

SiSS5810DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

10000

Duty cycle = 0.5

0.2

Notes

0.1

1000

P_DM

0.05

0.02

t₁

t₂

1. Duty cycle, D =

2. Per unit base = R_thJA= 81 °C/W

t₁

t₂

Single pulse

0.01

100

(t)

3. T_JM- T_A= P_DMZ_thJA

4. Surface mounted

0.001

1000

0.0001

0.001

0.01

0.1

100

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title

10000

1000

100

Duty cycle = 0.5

0.2

0.1

0.05

0.02

Single pulse

0.1

0.0001

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?62487.

S23-1175-Rev. A, 25-Dec-2023

Document Number: 62487

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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