Datasheet > SiSS5810DN

SiSS5810DN

更新时间： 2024-04-09 19:02:26

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	235K
描述
N-Channel 80 V (D-S) MOSFET

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SiSS5810DN 数据手册

SiSS5810DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

10000

1000

100

10000

1000

100

V_GS= 10 V thru 8 V

V_GS= 7 V

T_C= 25 °C

V_GS= 6 V

V_GS= 5 V

T_C= 125 °C

T_C= -55 °C

1.0

2.0

3.0

4.0

5.0

V_GS- Gate-to-Source Voltage (V)

V_DS- Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

Axis Title

0.030

0.025

0.020

0.015

0.010

0.005

10000

1000

100

10 000

1000

100

10000

1000

100

C_iss

V_GS= 7.5 V

C_oss

C_rss

V_GS= 10 V

V_DS- Drain-to-Source Voltage (V)

I_D- Drain Current (A)

On-Resistance vs. Drain Current

Capacitance

Axis Title

10000

1000

100

2.0

1.7

1.4

1.1

0.8

0.5

10000

1000

100

I_D= 10 A

V_GS= 10 V, 10 A

V_DS= 20 V, 40 V, 60 V

V_GS= 7.5 V, 10 A

12.5

-50 -25

75 100 125 150

2.5

7.5

T_J- Junction Temperature (°C)

Q_g- Total Gate Charge (nC)

Gate Charge

On-Resistance vs. Junction Temperature

S23-1175-Rev. A, 25-Dec-2023

Document Number: 62487

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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