Datasheet > SIHP7N60E

SIHP7N60E

更新时间： 2022-04-09 23:39:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	219K
描述
E Series Power MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHP7N60E 数据手册

SiHP7N60E

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.5

TOP

15 V

14 V

13 V

12 V

11 V

10 V

9 V

T_J= 25 °C

I_D= 3.5 A

8 V

7 V

6 V

BOTTOM 5 V

1.5

V_GS= 10 V

0.5

- 60 - 40 - 20

20 40 60 80 100 120 140 160

T_J, Junction Temperature (°C)

V_DS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

10 000

TOP

15 V

14 V

13 V

12 V

11 V

10 V

9 V

T_J= 150 °C

C_iss

1000

100

8 V

7 V

V_GS= 0 V, f = 1 MHz

C_iss= C_gs+ C_gd, C_dsShorted

C_rss= C_gd

BOTTOM 6 V

C_oss

C_oss= C_ds+ C_gd

C_rss

5 V

100

200

300

400

500

600

V_DS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

V_DS= 480 V

V_DS= 300 V

V_DS= 120 V

T_J= 25 °C

T_J= 150 °C

V_GS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

S12-3086-Rev. B, 24-Dec-12

Q_g, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91508

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 234 5 6 7 8

下载PDF

与SIHP7N60E相关器件

型号	品牌	描述	获取价格	数据表
SIHP8N50D	VISHAY	D Series Power MOSFET	获取价格
SiHR080N60E	VISHAY	E Series Power MOSFET	获取价格
SIHS20N50C-E3	VISHAY	N-CHANNEL 500-V - Rail/Tube	获取价格
SiHS36N50D	VISHAY	D Series Power MOSFET	获取价格
SIHS36N50D-E3	VISHAY	TRANSISTOR POWER, FET, FET General Purpose Power	获取价格
SiHS90N65E	VISHAY	E Series Power MOSFET	获取价格