Datasheet > SIHFR430ATA

SIHFR430ATA

更新时间： 2024-10-18 12:14:51

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	2677K
描述
Power MOSFET

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数据手册

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SIHFR430ATA 数据手册

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

R_DS(on)(Ω)

V_GS= 10 V

1.7

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Q_g(Max.) (nC)

6.5

COMPLIANT

_gs(nC)

_gd(nC)

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Configuration

Single

• Effective C_ossSpecified

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR430APbF

SiHFR430A-E3

IRFR430A

DPAK (TO-252)

IRFR430ATRPbF^a

SiHFR430AT-E3^a

IRFR430ATR^a

DPAK (TO-252)

IRFR430ATRLPbF^a

SiHFR430ATL-E3^a

IRFR430ATRL^a

SiHFR430ATL^a

DPAK (TO-252)

IRFR430ATRRPbF^a

SiHFR430ATR-E3^a

IRFR430ATRR^a

SiHFR430ATR^a

IPAK (TO-251)

IRFU430APbF

SiHFU430A-E3

IRFU430A

Lead (Pb)-free

SnPb

SiHFR430A

SiHFR430AT^a

SiHFU430A

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

5.0

Continuous Drain Current

V_GSat 10 V

I_D

3.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.91

130

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

5.0

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

110

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 11 mH, R_G= 25 Ω, I_AS= 5.0 A (see fig. 12).

c. I_SD≤ 5.0 A, dI/dt ≤ 320 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

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