Datasheet > SIHFR9010

SIHFR9010

更新时间： 2024-10-19 06:10:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1390K
描述
TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power

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SIHFR9010 数据手册

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

- 50

•

Surface Mountable (Order as IRFR9010, SiHFR9010)

Straight Lead Option (Order as IRFU9010, SiHFU9010)

_DS(on)(Ω)

V_GS= - 10 V

0.50

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

9.1

3.0

5.9

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

DPAK

IPAK

(TO-252)

(TO-251)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

Power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

P-Channel MOSFET

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, dc-to-dc converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

DPAK (TO-252)

SiHFR9010-GE3

IRFR9010PbF

SiHFR9010-E3

IRFR9010

DPAK (TO-252)

SiHFR9010TR-GE3^a

IRFR9010TRPbF^a

SiHFR9010T-E3^a

IRFR9010TR^a

DPAK (TO-252)

IPAK (TO-251)

SiHFU9010-GE3

IRFU9010PbF

SiHFU9010-E3

IRFU9010

SiHFR9010TRL-GE3^a

IRFR9010TRLPbF^a

SiHFR9010TL-E3^a

IRFR9010TRL^a

Lead (Pb)-free

SnPb

SiHFR9010

SiHFR9010T^a

SiHFR9010TL^a

SiHFU9010

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 50

T_C= 25 °C

T_C= 100 °C

- 5.3

- 3.3

- 21

Continuous Drain Current

_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

136

- 5.3

2.5

5.8

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

P_D

dV/dt

T_J, T_stg

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

T_C= 25 °C

V/ns

- 55 to + 150

300

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 9.7 mH, R_g= 25 Ω, peak I_L= - 5.3 A.

c. I_SD≤ - 5.3 A, dI/dt ≤ - 80 A/μs, V_DD≤ 40 V, T_J≤ 150 °C, suggested R_g= 24 Ω.

d. 0.063" (1.6 mm) from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91378

S10-1135-Rev. C, 10-May-10

www.vishay.com

12 3 4 5 6 7...9

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与SIHFR9010相关器件

型号	品牌	获取价格	描述	数据表
SIHFR9010T	VISHAY	获取价格	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General
SIHFR9012-E3	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPA
SIHFR9014	VISHAY	获取价格	Power MOSFET
SIHFR9014	KERSEMI	获取价格	Power MOSFET
SIHFR9014-E3	KERSEMI	获取价格	Power MOSFET
SIHFR9014-E3	VISHAY	获取价格	Power MOSFET
SIHFR9014T	VISHAY	获取价格	Power MOSFET
SIHFR9014TA	KERSEMI	获取价格	Power MOSFET
SIHFR9014T-E3	VISHAY	获取价格	Power MOSFET
SIHFR9014T-E3A	KERSEMI	获取价格	Power MOSFET

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