IRFR9012, IRFU9012, SiHFR9012, SiHFU9012
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
Surface Mountable (Order as IRFR9012, SiHFR9012)
Straight Lead Option (Order as IRFU9012, SiHFU9012)
- 50
Available
R
DS(on) (Ω)
VGS = - 10 V
0.70
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
RoHS*
Qg (Max.) (nC)
9.1
3.0
5.9
COMPLIANT
Q
Q
gs (nC)
gd (nC)
Configuration
Single
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt capability.
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
D
S
G
S
D
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
Power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9012PbF
SiHFR9012-E3
IRFR9012
DPAK (TO-252)
DPAK (TO-252)
IRFR9012TRLPbFa
SiHFR9012TL-E3a
IRFR9012TRLa
SiHFR9012TLa
IPAK (TO-251)
IRFU9012PbF
SiHFU9012-E3
IRFU9012
IRFR9012TRPbFa
SiHFR9012T-E3a
IRFR9012TRa
Lead (Pb)-free
SnPb
SiHFR9012
SiHFR9012Ta
SiHFU9012
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 50
20
V
TC = 25 °C
TC =100°C
- 4.5
- 2.8
- 18
Continuous Drain Current
V
GS at - 10 V
ID
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.20
240
- 5.3
2.5
25
5.8
W/°C
mJ
A
mJ
W
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
TC = 25 °C
V/ns
- 55 to + 150
300
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, RG = 25 Ω, peak IL = - 5.3 A.
c. ISD ≤ - 5.3 A, dI/dt ≤ - 80 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C, suggested RG = 24 Ω.
d. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91377
S09-0373-Rev. A, 09-Mar-09
www.vishay.com
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