SIHF634NL

更新时间： 2024-11-24 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	163K
描述
Power MOSFET

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SIHF634NL 数据手册

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Advanced Process Technology

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Ease of Paralleling

250

Available

R_DS(on)(Ω)

Q_g(Max.) (nC)

V_GS= 10 V

0.435

RoHS*

COMPLIANT

6.5

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

I²PAK (TO-262)

TO-220

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

D²PAK (TO-263)

N-Channel MOSFET

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRF634NL/SiHF634NL) is

available for low-profile application.

ORDERING INFORMATION

Package

TO-220

D²PAK (TO-263)

IRF634NSPbF

SiHF634NS-E3

IRF634NS

D²PAK (TO-263)

IRF634NSTRLPbF^a

SiHF634NSTL-E3^a

IRF634NSTRL^a

D²PAK (TO-263)

IRF634NSTRRPbF^a

SiHF634NSTR-E3^a

IRF634NSTRR^a

SiHF634NSTR^a

I²PAK (TO-262)

IRF634NPbF

SiHF634N-E3

IRF634N

IRF634NLPbF

Lead (Pb)-free

SiHF634NL-E3

SnPb

SiHF634N

SiHF634NS

SiHF634NSTL^a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

8.0

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

5.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

110

4.8

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

Repetiitive Avalanche Energy^a

E_AR

8.8

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91033

S-Pending-Rev. A, 19-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与SIHF634NL相关器件

型号	品牌	获取价格	描述	数据表
SIHF634NL-E3	VISHAY	获取价格	Power MOSFET
SIHF634NS	VISHAY	获取价格	Power MOSFET
SIHF634NS-E3	VISHAY	获取价格	Power MOSFET
SIHF634NSTL	VISHAY	获取价格	Power MOSFET
SIHF634NSTL-E3	VISHAY	获取价格	Power MOSFET
SIHF634NSTR	VISHAY	获取价格	Power MOSFET
SIHF634NSTR-E3	VISHAY	获取价格	Power MOSFET
SIHF634S	VISHAY	获取价格	TRANSISTOR 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, SMD-220, 3 PIN, FET Gener
SIHF634S-E3	VISHAY	获取价格	TRANSISTOR 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220,
SIHF634STR-E3	VISHAY	获取价格	TRANSISTOR 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220,

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