Datasheet > SIHF634STRR-GE3

SIHF634STRR-GE3

更新时间： 2024-11-27 14:44:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	193K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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SIHF634STRR-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.08
配置：	Single	最大漏极电流 (Abs) (ID)：	8.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	74 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

SIHF634STRR-GE3 数据手册

IRF634S, SiHF634S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

250

• Surface Mount

_DS(on)()

V_GS= 10 V

0.45

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

Q_g(Max.) (nC)

6.5

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D²PAK (TO-263)

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHF634S-GE3

IRF634SPbF

SiHF634S-E3

SiHF634STRR-GE3^a

IRF634STRRPbF^a

SiHF634STR-E3^a

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

8.1

Continuous Drain Current

V_GSat 10 V

I_D

5.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

0.025

300

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

8.1

Repetitive Avalanche Energy^a

E_AR

7.4

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

3.1

dV/dt

4.8

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 7.3 mH, R_g= 25 , I_AS= 8.1 A (see fig. 12).

c. I_SD 8.1 A, dI/dt  120 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91035

S11-1047-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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