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SIHF634S-E3 PDF预览

SIHF634S-E3

更新时间: 2024-11-06 14:44:43
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 193K
描述
TRANSISTOR 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power

SIHF634S-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.08
其他特性:AVALANCHE RATED雪崩能效等级(Eas):300 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):8.1 A最大漏极电流 (ID):8.1 A
最大漏源导通电阻:0.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):74 W最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHF634S-E3 数据手册

 浏览型号SIHF634S-E3的Datasheet PDF文件第2页浏览型号SIHF634S-E3的Datasheet PDF文件第3页浏览型号SIHF634S-E3的Datasheet PDF文件第4页浏览型号SIHF634S-E3的Datasheet PDF文件第5页浏览型号SIHF634S-E3的Datasheet PDF文件第6页浏览型号SIHF634S-E3的Datasheet PDF文件第7页 
IRF634S, SiHF634S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Halogen-free According to IEC 61249-2-21  
Definition  
250  
• Surface Mount  
R
DS(on) ()  
VGS = 10 V  
0.45  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
Qg (Max.) (nC)  
41  
6.5  
Q
Q
gs (nC)  
gd (nC)  
22  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D2PAK is a surface mount power package capable of  
accommodating die size up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2.0 W in a typical surface mount application.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHF634S-GE3  
IRF634SPbF  
SiHF634S-E3  
SiHF634STRR-GE3a  
IRF634STRRPbFa  
SiHF634STR-E3a  
Lead (Pb)-free  
Note  
a. See device orientation  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
250  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
C = 100 °C  
8.1  
Continuous Drain Current  
VGS at 10 V  
ID  
T
5.1  
A
Pulsed Drain Currenta  
IDM  
32  
Linear Derating Factor  
0.59  
0.025  
300  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
mJ  
A
8.1  
Repetitive Avalanche Energya  
EAR  
7.4  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
74  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.1  
dV/dt  
4.8  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 7.3 mH, Rg = 25 , IAS = 8.1 A (see fig. 12).  
c. ISD 8.1 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91035  
S11-1047-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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