SIHF6340STL-E3

更新时间： 2024-02-10 11:12:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	2115K
描述
Power MOSFET

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SIHF6340STL-E3 数据手册

IRF640S, IRF640L, SiHF640S, SiHF640L

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount

PRODUCT SUMMARY

V_DS(V)

200

Available

• Low-Profile Through-Hole

_DS(on)(Ω)

V_GS= 10 V

0.18

RoHS*

• Available in Tape and Reel

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

I²PAK

(TO-262)

D²PAK

(TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combinations of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the highest

power capability and the last lowest possible on-resistance in

any existing surface mount package. The D²PAK is suitable

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0 W in a

typical surface mount application. The through-hole version

(IRF640L/SiHF640L) is available for low-profile applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF640STRRPbF^a

SiHF640STR-E3^a

IRF640STRR^a

I²PAK (TO-262)

IRF640LPbF

SiHF640L-E3

IRF640L

IRF640SPbF

SiHF640S-E3

IRF640S

IRF640STRLPbF^a

SiHF6340STL-E3^a

IRF640STRL^a

Lead (Pb)-free

SnPb

SiHF640S

SiHF640STL^a

SiHF640STR^a

SiHF640L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

200

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

1.0

W/°C

E_AS

I_AR

580

Repetiitive Avalanche Energy^a

E_AR

_C= 25 °C

3.1

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

130

Peak Diode Recovery dV/dt^{c, e}

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.7 mH, R_G= 25 Ω, I_AS= 18 A (see fig. 12).

c. I_SD≤ 18 A, dI/dt ≤ 150 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF640/SiHF640 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91037

S-81241-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

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