Datasheet > SIA400EDJ

SIA400EDJ

更新时间： 2024-09-16 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	224K
描述
N-Channel 30 V (D-S) MOSFET

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SIA400EDJ 数据手册

New Product

SiA400EDJ

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^a

•

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

RoHS

0.019 at V_GS= 4.5 V

0.025 at V_GS= 2.5 V

COMPLIANT

11.6

SC-70 Package

- Small Footprint Area

•

Typical ESD Performance 2500 V HBM

100 % R_gand UIS Tested

PowerPAK SC-70-6L-Single

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch, OVP Switch

Boost Converters

DC/DC Converters

Marking Code

2.05 mm

A I X

Part # code

X X X

Lot Traceability

and Date code

Ordering Information:

SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

12^a

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

12^a

Continuous Drain Current (T_J= 150 °C)

I_D

11^{b, c}

8.8^{b, c}

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

12^a

2.9^{b, c}

11.25

19.2

12.3

3.5^{b, c}

2.2^{b, c}

- 55 to 150

260

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

E_AS

Avalanche Current

Single Pulse Avalanche

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

t  5 s

Steady State

°C/W

5.3

6.5

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

Document Number: 67844

S11-1148-Rev. A, 13-Jun-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIA400EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA400EDJ-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA406DJ	VISHAY	获取价格	N-Channel 12-V (D-S) MOSFET
SIA406DJ-T1-GE3	VISHAY	获取价格	N-Channel 12-V (D-S) MOSFET
SIA408DJ	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA408DJ-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA411DJ-T1-GE3	VISHAY	获取价格	P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SiA413ADJ	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA413ADJ-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor
SIA413ADJ-T4-GE3	VISHAY	获取价格	Power Field-Effect Transistor
SIA413DJ	VISHAY	获取价格	P-Channel 12-V (D-S) MOSFET

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