Datasheet > SIA413ADJ-T4-GE3

SIA413ADJ-T4-GE3

更新时间： 2024-11-06 20:52:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	215K
描述
Power Field-Effect Transistor

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SIA413ADJ-T4-GE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.68
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIA413ADJ-T4-GE3 数据手册

New Product

SiA413ADJ

Vishay Siliconix

P-Channel 12 V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

Thermally Enhanced PowerPAK^®SC-70

V_DS(V)

R_DS(on)() (Max.)

0.029 at V_GS= - 4.5 V

0.034 at V_GS= - 2.5 V

0.044 at V_GS= - 1.8 V

0.100 at V_GS= - 1.5 V

I_D(A)

Q_g(Typ.)

Package

- Small Footprint Area

- Low On-Resistance

- 12^a

- 12

23 nC

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

- 3

PowerPAK SC-70-6L-Single

APPLICATIONS

•

Load Switch, PA Switch, and Battery Switch for Portable

Devices

Marking Code

2.05 mm

B S X

Part # code

X X X

Lot Traceability

and Date code

Ordering Information:

SiA413ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free)

SiA413ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 12

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 12^a

- 10^{b, c}

- 8^{b, c}

- 40

- 12^a

- 2.9^{b, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

3.5^{b, c}

2.2^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t  5 s

Steady State

°C/W

5.3

6.5

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

Document Number: 63650

S12-1141-Rev. B, 21-May-12

www.vishay.com

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIA413ADJ-T4-GE3相关器件

型号	品牌	获取价格	描述	数据表
SIA413DJ	VISHAY	获取价格	P-Channel 12-V (D-S) MOSFET
SIA413DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 12V, 0.029ohm, 1-Element, P-Channel, Silicon, Met
SIA413DJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 10 A, 12 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SIA413DJ-T4-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SIA414DJ	VISHAY	获取价格	Dual N-Channel 8-V (D-S) MOSFET
SIA414DJ_08	VISHAY	获取价格	N-Channel 8-V (D-S) MOSFET
SIA414DJ-T1-GE3	VISHAY	获取价格	N-Channel 8-V (D-S) MOSFET
SIA415DJ	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA415DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 8.4A I(D), 20V, 0.035ohm, 1-Element, P-Channel, Silicon, Me
SIA415DJ-T1-GE3	VISHAY	获取价格	MOSFET P-CH 20V 12A SC70-6

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