Datasheet > Si8487DB

Si8487DB

更新时间： 2024-11-25 14:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	245K
描述
P-Channel 30 V (D-S) MOSFET

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Si8487DB 数据手册

Si8487DB

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

I_D(A) ^{a, e}

-7.7

• Low-on resistance

0.031 at V_GS= -10 V

0.035 at V_GS= -4.5 V

0.045 at V_GS= -2.5 V

• Ultra-small 1.6 mm x 1.6 mm maximum outline

• Ultra-thin 0.6 mm maximum height

• Pin compatible to Si8409DB

-30

-7.3

-6.4

MICRO FOOT^®1.6 x 1.6

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

8487

xxx

• Mobile computing, smart phones,

tablet PCs

- Load switch

- Battery switch

- Charger switch

- OVP switch

Backside View

Bump Side View

Marking Code: 8487

Ordering Information:

Si8487DB-T1-E1 (lead (Pb)-free and halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

-7.7 ^a

-6.2 ^a

-4.9 ^b

-4 ^b

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current (t = 300 μs)

I_DM

I_S

-25

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

-2.3 ^a

-0.92 ^b

2.7 ^a

1.8 ^a

1.1 ^b

0.73 ^b

-55 to +150

260

Continuous Source-Drain Diode Current

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Package Reflow Conditions ^c

T_J, T_stg

V_PR

°C

IR / convection

260

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^{a, f}

Maximum Junction-to-Ambient ^{b, g}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t = 5 s

°C/W

R_thJA

110

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC / JEDEC^®(J-STD-020), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on T_A= 25 °C.

f. Maximum under steady state conditions is 85 °C/W.

g. Maximum under steady state conditions is 175 °C/W.

S15-1692-Rev. E, 20-Jul-15

Document Number: 63483

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与Si8487DB相关器件

型号	品牌	获取价格	描述	数据表
SI8487DB-T1-E1	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SI8489EDB	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI8489EDB-T2-E1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semi
SI8497DB	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI8497DB-T2-E1	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI8499DB	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI8499DB-T2-E1	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI85	ETC	获取价格	SMT Power Inductor
SI-8500L	SANKEN	获取价格	Switching Regulator,
SI8501-B-GM	SILICON	获取价格	UNIDIRECTIONAL AC CURRENT SENSORS

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