Datasheet > SI8499DB

SI8499DB

更新时间： 2024-11-24 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	133K
描述
P-Channel 20 V (D-S) MOSFET

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SI8499DB 数据手册

Si8499DB

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^e

Definition

0.032 at V_GS= - 4.5 V

0.046 at V_GS= - 2.5 V

0.065 at V_GS= - 2.0 V

0.120 at V_GS= - 1.8 V

TrenchFET^®Power MOSFET

Ultra-small 1.5 mm x 1 mm Maximum Outline

Ultra-thin 0.59 Maximum Height

- 16

•

- 14.3

- 12

- 20

14.5 nC

Compliant to RoHS Directive 2002/95/EC

- 2.5

APPLICATIONS

MICRO FOOT

•

Low On-Resistance Load Switch, Charger Switch and

Battery Switch for Portable Devices

- Low Power Consumption

Bump Side View

Backside View

- Increased Battery Life

Device Marking: 8499

xxx = Date/Lot Traceability Code

P-Channel MOSFET

Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

- 16

_C= 70 °C

_A= 25 °C

- 13.7

Continuous Drain Current (T_J= 150 °C)

I_D

- 7.8^{a, b}

- 6.3^{a, b}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

- 20

T_C= 25 °C

T_A= 25 °C

- 10.8

Continuous Source-Drain Diode Current

- 2.3^{a, b}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

8.4

P_D

Maximum Power Dissipation

2.77^{a, b}

1.77^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Package Reflow Conditions^c

°C

IR/Convection

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.

d. Case is defined as the top surface of the package.

e. Based on T_C= 25 °C.

Document Number: 65906

S10-0543-Rev. A, 08-Mar-10

www.vishay.com

12 3 4 5 6 7...9

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