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SI8499DB-T2-E1 PDF预览

SI8499DB-T2-E1

更新时间: 2024-11-24 09:25:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 133K
描述
P-Channel 20 V (D-S) MOSFET

SI8499DB-T2-E1 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:GRID ARRAY, R-PBGA-B6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.53Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.046 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PBGA-B6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:GRID ARRAY
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):13 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:BALL端子位置:BOTTOM
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI8499DB-T2-E1 数据手册

 浏览型号SI8499DB-T2-E1的Datasheet PDF文件第2页浏览型号SI8499DB-T2-E1的Datasheet PDF文件第3页浏览型号SI8499DB-T2-E1的Datasheet PDF文件第4页浏览型号SI8499DB-T2-E1的Datasheet PDF文件第5页浏览型号SI8499DB-T2-E1的Datasheet PDF文件第6页浏览型号SI8499DB-T2-E1的Datasheet PDF文件第7页 
Si8499DB  
Vishay Siliconix  
P-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)e  
Definition  
0.032 at VGS = - 4.5 V  
0.046 at VGS = - 2.5 V  
0.065 at VGS = - 2.0 V  
0.120 at VGS = - 1.8 V  
TrenchFET® Power MOSFET  
Ultra-small 1.5 mm x 1 mm Maximum Outline  
Ultra-thin 0.59 Maximum Height  
- 16  
- 14.3  
- 12  
- 20  
14.5 nC  
Compliant to RoHS Directive 2002/95/EC  
- 2.5  
APPLICATIONS  
MICRO FOOT  
Low On-Resistance Load Switch, Charger Switch and  
Battery Switch for Portable Devices  
- Low Power Consumption  
Bump Side View  
Backside View  
- Increased Battery Life  
S
S
D
G
S
D
2
3
4
1
6
5
S
G
Device Marking: 8499  
xxx = Date/Lot Traceability Code  
D
P-Channel MOSFET  
Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
TC = 25 °C  
- 16  
T
C = 70 °C  
A = 25 °C  
- 13.7  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 7.8a, b  
T
- 6.3a, b  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
- 20  
TC = 25 °C  
TA = 25 °C  
- 10.8  
Continuous Source-Drain Diode Current  
- 2.3a, b  
13  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
8.4  
PD  
Maximum Power Dissipation  
W
2.77a, b  
1.77a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Package Reflow Conditionsc  
°C  
IR/Convection  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.  
d. Case is defined as the top surface of the package.  
e. Based on TC = 25 °C.  
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
www.vishay.com  
1

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