Datasheet > SI8497DB

SI8497DB

更新时间： 2024-11-09 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	151K
描述
P-Channel 30 V (D-S) MOSFET

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SI8497DB 数据手册

Si8497DB

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^d

V_DS(V)

R_DS(on)() Max.

Q_g(Typ.)

Definition

•

TrenchFET^®Power MOSFET

Ultra-small 1.5 mm x 1 mm Maximum Outline

Ultra-thin 0.59 Maximum Height

0.053 at V_GS= - 4.5 V

0.071 at V_GS= - 2.5 V

0.120 at V_GS= - 2.0 V

- 13

- 11

- 5

- 30

16.3 nC

Compliant to RoHS Directive 2002/95/EC

MICRO FOOT

APPLICATIONS

Bump Side View

Backside View

•

Low On-Resistance Load Switch, Charger Switch,

OVP Switch and Battery Switch for Portable

Devices

- Low Power Consumption

- Increased Battery Life

- Space Savings on PCB

Device Marking: 8497

xxx = Date/Lot Traceability Code

Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 30

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

- 13

- 10

Continuous Drain Current (T_J= 150 °C)

I_D

- 5.9^{a, b}

T_A= 25 °C

- 4.7^{a, b}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

- 20

T_C= 25 °C

T_A= 25 °C

- 11

Continuous Source-Drain Diode Current

- 2.3^{a, b}

_C= 25 °C

T_C= 70 °C

_A= 25 °C

8.4

P_D

Maximum Power Dissipation

2.77^{a, b}

1.77^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Package Reflow Conditions^c

°C

IR/Convection

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.

d. Based on T_C= 25 °C.

Document Number: 63355

S11-1385-Rev. A, 11-Jul-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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