Datasheet > SI4840BDY

SI4840BDY

更新时间： 2024-11-23 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	240K
描述
N-Channel 40-V (D-S) MOSFET

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SI4840BDY 数据手册

Si4840BDY

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

0.009 at V_GS= 10 V

0.012 at V_GS= 4.5 V

•

15 nC

Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•

Synchronous Rectification

•

POL, IBC

SO-8

- Secondary Side

Top View

Ordering Information:

Si4840BDY-T1-E3 (Lead (Pb)-free)

Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

12.4^{a, b}

9.9^{a, b}

2.1^{a, b}

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

Avalanche Current

Avalanche Energy

I_DM

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

Continuous Source-Drain Diode Current

I_S

_A= 25 °C

T_C= 25 °C

_C= 70 °C

3.8

Maximum Power Dissipation

P_D

2.5^{a, b}

1.6^{a, b}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

Document Number: 69795

S09-0532-Rev. C, 06-Apr-09

www.vishay.com

12 3 4 5 6 7...10

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