Datasheet > SI4562DY

SI4562DY

更新时间： 2024-01-12 15:40:49

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	74K
描述
N- and P-Channel 2.5-V (G-S) MOSFET

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技术参数
数据手册

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SI4562DY 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	最大漏极电流 (Abs) (ID)：	7.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI4562DY 数据手册

Si4562DY

Vishay Siliconix

N- and P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.025 @ V = 4.5 V

"7.1

"6.0

"6.2

"5.0

N-Channel

P-Channel

0.035 @ V = 2.5 V

0.033 @ V = –4.5 V

–20

0.050 @ V = –2.5 V

SO-8

Top View

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

"7.1

"5.7

"40

1.7

–20

"12

"6.2

"4.9

"40

–1.7

2.0

= 25_C

= 70_C

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

= 25_C

= 70_C

2.0

Maximum Power Dissipation

1.3

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P-Channel

Unit

Maximum Junction-to-Ambient

thJA

62.5

_C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 70717

S-54940—Rev. A, 29-Sep-97

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5 6

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