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SI3403DV-T1-GE3 PDF预览

SI3403DV-T1-GE3

更新时间: 2024-01-12 03:12:48
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
7页 97K
描述
TRANSISTOR 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

SI3403DV-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):3.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI3403DV-T1-GE3 数据手册

 浏览型号SI3403DV-T1-GE3的Datasheet PDF文件第2页浏览型号SI3403DV-T1-GE3的Datasheet PDF文件第3页浏览型号SI3403DV-T1-GE3的Datasheet PDF文件第4页浏览型号SI3403DV-T1-GE3的Datasheet PDF文件第5页浏览型号SI3403DV-T1-GE3的Datasheet PDF文件第6页浏览型号SI3403DV-T1-GE3的Datasheet PDF文件第7页 
Si3403DV  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
TrenchFET® Power MOSFET  
PWM Optimized, Low Qgd/Qgs Ratio  
0.07 at VGS = - 4.5 V  
0.105 at VGS = - 2.5 V  
- 5  
- 20  
4.5 nC  
- 4.1  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Load Switch for Portable Applications  
Small Portable DC-DC Applications  
TSOP-6  
Top View  
S
D
D
G
D
1
2
3
6
3 mm  
D
5
4
Marking Code  
AE XXX  
G
S
Lot Traceability  
and Date Code  
Part # Code  
2.85 mm  
D
Ordering Information: Si3403DV-T1-E3 (Lead (Pb)-free)  
Si3403DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
V
VGS  
12  
- 5a  
- 4  
- 4b,c  
- 3.1b,c  
- 20  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
A
IDM  
IS  
Pulsed Drain Current  
- 2.6  
1.6b,c  
T
C = 25 °C  
A = 25 °C  
Continuous Source-Drain Diode Current  
T
IAS  
Avalanche Current  
5
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
1.25  
3.2  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
2.1  
2b,c  
PD  
Maximum Power Dissipation  
1.25b,c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot  
Symbol  
RthJA  
RthJF  
Typical  
51  
Maximum  
Unit  
t 5 s  
Steady State  
62.5  
39  
°C/W  
32  
Notes:  
a. Package Limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 74404  
S09-0766-Rev. B, 04-May-09  
www.vishay.com  
1

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