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SFT6341ZDB PDF预览

SFT6341ZDB

更新时间: 2024-11-05 13:13:27
品牌 Logo 应用领域
SSDI 晶体晶体管
页数 文件大小 规格书
2页 51K
描述
Power Bipolar Transistor

SFT6341ZDB 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N最大集电极电流 (IC):25 A
基于收集器的最大容量:300 pF集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):12
最大降落时间(tf):250 nsJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):200 W
最大上升时间(tr):300 ns表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):1250 nsVCEsat-Max:1.8 V
Base Number Matches:1

SFT6341ZDB 数据手册

 浏览型号SFT6341ZDB的Datasheet PDF文件第2页 
SFT6338 - SFT6341  
SERIES  
SOLID STATE DEVICES, INC.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
25 AMP  
100 - 150 VOLTS  
NPN HIGH SPEED  
POWER TRANSISTOR  
DESIGNER'S DATA SHEET  
1/  
Part Number /Ordering Information  
SFT6338 M TX  
SFT6339 M TX  
SFT6340 M TX  
SFT6341 M TX  
APPLICATION NOTES:  
• Replaces Industry Standard 2N6338 thru  
2/  
Screening : _ = Not Screened  
2N6341  
TX = TX Level  
TXV = TXV Level  
• Designed for High Voltage, High Speed,  
Power Switching Applications Such as:  
• Off-Line Supplies  
S
= Space Level  
3/4/  
Lead Bend _= Straight  
• Converter Circuits  
• Pulse Width Modulated Regulators  
• Motor Controls  
UB = Up Bend  
DB = Down Bend  
3/  
Package:  
M
Z
= TO-254  
• Deflection Circuits  
= TO-254Z  
• Designed for Complimentary Use with  
SFT6436 thru SFT6438  
/3 = TO-3  
MAXIMUM RATINGS  
SYMBOL  
VALUE  
UNITS  
Volts  
Collector-Emitter Voltage  
SFT6338  
SFT6339  
SFT6340  
SFT6341  
100  
120  
140  
150  
V
V
CEO  
CBO  
Collector-Base Voltage  
SFT6338  
SFT6339  
SFT6340  
SFT6341  
120  
140  
160  
180  
Volts  
Continuous Collector Current  
Peak Collector Current  
I
25  
Amps  
Amps  
Amps  
oC  
C
I
50  
10  
C(pk)  
Continious Base Current  
I
B
Operating and Storage Temperature  
T T  
J, STG  
-65 to +200  
Total Device Dissipation @ T = 25oC  
200  
1.14  
W
W/oC  
C
P
D
Derate above 25oC  
R
1.0  
oC/W  
Thermal Resistance, Junction to Case  
2JC  
1
TO-3  
TO-254  
TO-254Z  
3
2
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0025A  

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