Datasheet > SFT6650-3

SFT6650-3

更新时间： 2024-09-15 03:32:31

品牌	Logo	应用领域
SSDI		晶体晶体管
页数	文件大小	规格书
2页	33K
描述
10 AMP / 80 Volts 50 MHz PNP POWER DARLINGTON BIPOLAR TRANSISTOR

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SFT6650-3 数据手册

SFT6650/3

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

10 AMP / 80 Volts

50 MHz

TO-3

PNP POWER DARLINGTON

BIPOLAR TRANSISTOR

Features:

Low Saturation Voltage

Hermetically Sealed, Isolated Package

Direct Replacement for 2N6650

TX, TXV, S-Level Screening Available,

Equivalent to MIL-PRF-19500/527

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

V_CEO

V_CBO

V_EBO

I_C

Volts

Amps

Continuous Collector Current

Maximum Base Current

0.25

I_B

@ T_A= 25ºC

@ T_C= 25ºC

P_D1

P_D2

Power Dissipation

ºC

-65 to +175

Operating & Storage Temperature

Top & Tstg

Maximum Thermal Resistance

Junction to Case

1.76

ºC/W

R_qJC

Ø.875 MAX

TO-3

.135

MAX

.450

.250

2x .312

MIN

.043

.038

SEATING PLANE

.165

.151

.675

.655

2x Ø

.525 MAX

2x R.188 MAX

NOTES:

THIS DIMENSION SHALL BE MEASURED

AT POINTS .050 - .055" BELOW THE

.440

.420

.225

.205

SEATING PLANE. WHEN GAGE IS NOT

USED, MEASUREMENT WILL BE MADE AT

SEATING PLANE.

THIS OUTLINE DOES NOT MEET THE

MINIMUM CRITERIA ESTABLISHED

BY JS-10 FOR REGISTRATION.

1.197

1.177

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0089A

DOC

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