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SFT6678MTXV PDF预览

SFT6678MTXV

更新时间: 2024-11-05 13:13:27
品牌 Logo 应用领域
SSDI 晶体晶体管
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3页 205K
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SFT6678MTXV 数据手册

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SFT6678 SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
15 AMPS  
400 Volts  
NPN High Speed  
Power Transistor  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
SFT6678 M __ TX  
Screening 2/ __ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Application Notes:  
• Replaces Industry Standard 2N6678  
• Designed for High Voltage, High Speed,  
Power Switching Applications Such as:  
• Off-Line Supplies  
• Converter Circuits  
• Pulse Width Modulated Regulators  
Lead Bend 3/ _ = Straight Leads  
UB = Up Bend  
DB = Down Bend  
Package  
M = TO-254  
Z = TO-254Z  
/3 = TO-3  
• Motor Controls  
• Deflection Circuits  
Maximum Ratings  
Symbol  
Value  
Units  
Collector – Emitter Voltage  
Collector – Base Voltage  
Emitter – Base Voltage  
VCEO  
VCBO  
VEBO  
IC  
Volts  
Volts  
Volts  
Amps  
Amps  
°C  
400  
650  
8.0  
Continuous Collector Current  
Continuous Base Current  
15  
IB  
5.0  
Operating and Storage Temperature  
TJ, TSTG  
-65 to +200  
Total Power Dissipation  
@ TC=25°C  
@ TA=25°C  
W
W
175  
6.0  
PD  
Maximum Thermal Resistance  
(Junction to Case)  
(Ambient to Case)  
R0JC  
R0JA  
1.0  
29.17  
ºC/W  
TO-254 (M)  
TO-254 (Z)  
TO-3 (/3)  
NOTES:  
Pulse Test: Pulse Width = 300 µs, Duty Cycle < 2%  
*
1/ For ordering information, price, and availability contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Up and down bend configurations available for M and Z (TO-254 and TO-254Z) packages only.  
4/ All electrical characteristics @ 25°C, unless otherwise specified.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0019D  
DOC  

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