SFI2955TU

更新时间： 2024-09-27 13:13:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管脉冲
页数	文件大小	规格书
7页	250K
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数据手册
替代型号

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SFI2955TU 数据手册

SFW/I2955

Advanced Power MOSFET

FEATURES

BV_DSS= -60 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.3

I_D= -9.4 A

Improved Gate Charge

Extended Safe Operating Area

175^oC Operating Temperature

Lower Leakage Current : 10 mA (Max.) @ V_DS= -60V

Low R_DS(ON): 0.22 W (Typ.)

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

-60

Units

V_DSS

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=100^oC)

Drain Current-Pulsed

-9.4

-6.6

-38

I_D

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

151

-9.4

4.9

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

-5.5

3.8

Total Power Dissipation (T_A=25 C)

Total Power Dissipation (T_C=25^oC)

Linear Derating Factor

P_D

W/^oC

0.33

Operating Junction and

T_J, T_STG

- 55 to +175

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_qJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

3.06

^oC/W

R_qJA

Junction-to-Ambient

R_qJA

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

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SFI2955TU 替代型号

型号	品牌	替代类型	描述	数据表
SPP08P06PH	INFINEON	功能相似	Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta
SPB08P06PG	INFINEON	功能相似	SIPMOS Power-Transistor

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