Datasheet > SFF80N10Z

SFF80N10Z

更新时间： 2024-02-25 21:00:48

品牌	Logo	应用领域
SSDI		栅
页数	文件大小	规格书
2页	47K
描述
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET

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SFF80N10Z 数据手册

SFF80N10M

SFF80N10Z

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

55 AMP (note 1) /100 Volts

12 mO

TO-254, TO254Z

N-Channel Trench Gate MOSFET

Note 1: maximum current limited by package

configuration

Features:

Trench gate technology for high cell density

Lowest ON-resistance in the industry

Enhanced operating temperature range

Hermetically Sealed, Isolated Power Package

Low Total Gate Charge

Fast Switching

Enhanced replacement for IRM150

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

TO-254 (SFF85N10M)

TO-254Z (SFF85N10Z)

Maximum Ratings

Symbol

Value

100

Units

Drain - Source Voltage

Gate – Source Voltage

V_DSS

V_GS

±20

@ T_C= 25ºC

@ T_C= 125ºC

55 (note 1)

I_D1

I_D2

Max. Continuous Drain Current (package limited)

Max. Instantaneous Drain Current (Tj limited)

@ T_C= 25ºC

@ T_C= 125ºC

110

I_D3

I_D4

280

Max. Avalanche current

@ L= 0.1 mH

@ T_C= 25ºC

I_AR

E_AR

ºC

Repetitive Avalanche Energy

Total Power Dissipation

250

P_D

-55 to +200

Operating & Storage Temperature

Maximum Thermal Resistance

T_OP& T_STG

0.7

(typ 0.55)

Junction to Case

ºC/W

R_0JC

TO-254

TO-

PIN 3

PIN 2

PIN 1

PIN 3

PIN 2

PIN 1

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0019A

DOC

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