Datasheet > SFF80N20S1S

SFF80N20S1S

更新时间： 2024-01-16 05:44:27

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	137K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SFF80N20S1S 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

SFF80N20S1S 数据手册

SFF80N20S1

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

80 AMP , 200 Volts, 15 mΩ

Avalanche Rated

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFF80N20 ___ ___

N-channel MOSFET

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

Features:



Rugged poly-Si gate

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed Surface Mount Package

Low Total Gate Charge

Fast Switching



Package

S1 = SMD1

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

Maximum Ratings^3/

Symbol

V_DSS

Value

Unit

Drain - Source Voltage

200

±20

±30

continuous

transient

Gate – Source Voltage

V_GS

I_D1

Max. Continuous Drain Current

(package limited)

@ T_C= 25°C

@ T_C= 175°C

Max. Instantaneous Drain Current

(Tj limited)

I_D2

I_D3

Max. Avalanche Current

@ L= 0.1 mH

@ I_D= 80 A

I_AR

E_AS

500

Single and Repetitive Avalanche Energy

Total Power Dissipation

150

@ T_C= 25°C

P_D

Operating & Storage Temperature

-55 to +175

°C

_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

R_θJC

0.55 (typ.0.4)

°C/W

NOTES:

SMD1 (S1)

*Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available

on request.

3/ Unless otherwise specified, all electrical characteristics @25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0081A

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