生命周期: | Active | 包装说明: | POST/STUD MOUNT, S-XUPM-P3 |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 12 A |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-228AA |
JESD-30 代码: | S-XUPM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | P-CHANNEL |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF9130J | SSDI |
获取价格 |
-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET | |
SFF9130M | SSDI |
获取价格 |
-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET | |
SFF9130MDB | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SFF9130MDBS | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF9130MDBTX | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SFF9130MDBTXV | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SFF9130MDSB | SSDI |
获取价格 |
Transistor | |
SFF9130MGZ | SSDI |
获取价格 |
Transistor | |
SFF9130MS | SSDI |
获取价格 |
暂无描述 | |
SFF9130MTX | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET |