生命周期: | Active | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, S-CQCC-N28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.64 | 雪崩能效等级(Eas): | 84 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.35 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-CQCC-N28 |
元件数量: | 1 | 端子数量: | 28 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF9130AA | SSDI |
获取价格 |
Transistor | |
SFF9130AAGZ | SSDI |
获取价格 |
Transistor | |
SFF9130J | SSDI |
获取价格 |
-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET | |
SFF9130M | SSDI |
获取价格 |
-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET | |
SFF9130MDB | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SFF9130MDBS | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF9130MDBTX | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SFF9130MDBTXV | SSDI |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SFF9130MDSB | SSDI |
获取价格 |
Transistor | |
SFF9130MGZ | SSDI |
获取价格 |
Transistor |