SFF27N50M
SFF27N50Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
27 AMP , 500 Volts, 175 mΩ
Avalanche Rated N-channel
MOSFET
SFF27N50 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Package 3/ 4/
M = TO-254
Z = TO-254Z
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
Gate – Source Voltage
500
±20
±30
continuous
transient
VGS
ID1
V
A
Max. Continuous Drain Current (package
limited)
27
@ TC = 25ºC
@ TC = 25ºC
@ TC = 125ºC
ID2
ID3
27
18
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
A
A
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
IAR
35
EAS
EAR
1500
50
Single and Repetitive Avalanche Energy
mJ
Total Power Dissipation
100
W
PD
Operating & Storage Temperature
-55 to +150
ºC
T
OP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.0
(typ.0.75)
RθJC
ºC /W
NOTES:
TO-254
TO-254Z
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165H
DOC