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SFF2N60 PDF预览

SFF2N60

更新时间: 2024-11-16 06:11:15
品牌 Logo 应用领域
稳先微 - WINSEMI /
页数 文件大小 规格书
7页 502K
描述
Silicon N-Channel MOSFET

SFF2N60 数据手册

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SFF2N60  
Silicon N-Channel MOSFET  
Features  
■2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V  
■ Ultra-low Gate Charge(Typical 9.0nC)  
■ Fast Switching Capability  
■ 100%Avalanche Tested  
■ Maximum Junction Temperature Range(150)  
General Description  
This Power MOSFET is produced using Winsemi’s advanced  
planar stripe, DMOS technology. This latest technology has been  
especially designed to minimize on-state resistance , have a high  
rugged avalanche characteristics. This devices is specially well  
suited for high efficiency switch mode power supply.  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
Value  
600  
Units  
V
Drain Source Voltage  
ID  
Continuous Drain Current(@TC=25)  
Continuous Drain Current(@TC=100)  
Drain Current Pulsed  
2.0*  
1.5*  
9.5*  
±30  
A
A
IDM  
(Note1)  
A
VGS  
EAS  
EAR  
dv/dt  
PD  
Gate to Source Voltage  
V
SinglePulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation(@TC=25)  
Derating Factor above25℃  
(Note2)  
(Note1)  
(Note3)  
140  
mJ  
mJ  
V/ns  
W
2.8  
4.5  
23  
0.18  
-55~150  
300  
W/℃  
TJ,Tstg  
TL  
Junction and Storage Temperature  
Channel Temperature  
*Drain current limited by junction temperature  
Thermal Characteristics  
Value  
Typ  
Symbol  
Parameter  
Units  
Min  
Max  
5.5  
RQJC  
RQJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
-
-
-
-
/W  
/W  
62.5  
Rev.A Aug.2010  
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.  

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