Datasheet > SFF2N60-KR

SFF2N60-KR

更新时间： 2024-09-28 12:46:59

品牌	Logo	应用领域
SEMIWELL		/
页数	文件大小	规格书
5页	207K
描述
N-Channel MOSFET

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SFF2N60-KR 数据手册

SemiWell Semiconductor

SFF2N60-KR

N-Channel MOSFET

Features

◆ R_DS(ON)Max 5.0ohm at V_GS= 10V

◆ Gate Charge ( Typical 9.0nC)

◆ Improve dv/dt capability, Fast switching

◆ 100% avalanche Tested

General Description

This MOSFET is produced using advanced planar strip

DMOS technology. This latest technology has been

especially designed to minimize on-state resistance have a

high rugged avalanche characteristics. These device are well

suited for high efficiency switch mode power supply active

power factor correction. Electronic lamp based on half bridge

topology

Absolute Maximum Ratings (T_J= 25℃ unless otherwise specified)

Symbol

V_DSS

Parameter

Ratings

600

Units

Drain-Source Voltage

Drain Current T_C=25℃

I_D

T_C=100℃

Gate-Source Voltage

1.35

± 30

V_GSS

I_DM

Drain Current pulse

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Power Dissipation T_C=25℃

Operation and Storage Temperature range

130

V/ns

E_AR

5.55

4.5

dv/dt

P_D

23.6

-45 ~ 150

T_j, T_STG

℃

12 3 4 5

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