Datasheet > SFF2N60

SFF2N60

更新时间： 2024-11-16 12:46:59

品牌	Logo	应用领域
SEMIWELL		/
页数	文件大小	规格书
5页	216K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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SFF2N60 数据手册

ꢀ

SemiWell Semiconductorꢀ

SFF2N60

N-Channel MOSFET

Features

◆ꢀ R_DS(ON)ꢀMaxꢀ5.0ohmꢀatꢀV_GSꢀ=ꢀ10Vꢀ

◆ꢀ GateꢀChargeꢀ(ꢀTypicalꢀ9.0nC)ꢀ

◆ꢀ Improveꢀdv/dtꢀcapability,ꢀFastꢀswitchingꢀ

◆ꢀ 100%ꢀavalancheꢀTestedꢀ

General Description

Thisꢀ MOSFETꢀ isꢀ producedꢀ usingꢀ advancedꢀ planarꢀ stripꢀ

DMOSꢀ technology.ꢀ Thisꢀ latestꢀ technologyꢀ hasꢀ beenꢀ

especiallyꢀ designedꢀ toꢀ minimizeꢀ onꢁstateꢀ resistanceꢀ haveꢀ aꢀ

highꢀruggedꢀavalancheꢀcharacteristics.ꢀTheseꢀdeviceꢀareꢀwellꢀ

suitedꢀ forꢀ highꢀ efficiencyꢀ switchꢀ modeꢀ powerꢀ supplyꢀ activeꢀ

powerꢀfactorꢀcorrection.ꢀElectronicꢀlampꢀbasedꢀonꢀhalfꢀbridgeꢀ

topology

AbsoluteꢀMaximumꢀRatingsꢀ(T_Jꢀ=ꢀ25℃ unless otherwise specified)ꢀ

ꢀ

Symbolꢀ

Parameterꢀ

Ratingsꢀ

600ꢀ

Unitsꢀ

Vꢀ

V_DSS

I_Dꢀ

ꢀ

DrainꢁSourceꢀVoltageꢀ

DrainꢀCurrentꢀ ꢀ T_C=25℃

2ꢀ

Aꢀ

T_C=100℃ꢀ

GateꢁSourceꢀVoltageꢀ

1.35ꢀ

±ꢀ 30ꢀ

8ꢀ

V_GSS

ꢀ

Vꢀ

Aꢀ

I_DM

E_AS

E_AR

ꢀ

DrainꢀCurrentꢀ ꢀ pulseꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ

SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ

RepetitiveꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ ꢀ

PeakꢀdiodeꢀRecoveryꢀdv/dtꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ3)ꢀ

PowerꢀDissipationꢀT_C=25℃ꢀ

ꢀ

130ꢀ

mJꢀ

V/nsꢀ

Wꢀ

ꢀ

5.55ꢀ

4.5ꢀ

dv/dtꢀ

P_Dꢀ

23.6ꢀ

ꢁ45ꢀ~ꢀ150ꢀ

T_j,ꢀT_STG

ꢀ

OperationꢀandꢀStorageꢀTemperatureꢀrangeꢀ

℃ꢀ

ꢀ

12 3 4 5

中文翻译

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