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SFF25P20_1 PDF预览

SFF25P20_1

更新时间: 2024-11-15 09:28:27
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
3页 125K
描述
typical P-Channel MOSFET

SFF25P20_1 数据手册

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SFF25P20 Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
25 AMP / 200 Volts  
150 mtypical  
Part Number/Ordering Information 1/  
P-Channel MOSFET  
SFF25P20  
___ ___  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
Features:  
polySi gate cell structure  
S = S Level  
Package 2/  
Low ON-resistance  
UIS (unclamped inductive switching) rated  
Hermetically Sealed, Isolated Package  
Low package inductance  
Stress relief provided by flexible leads –  
several options available  
S2I = SMD2 Isolated  
M = TO-254  
Improved (RDS(ON) QG) figure of merit  
TX, TXV, S-Level screening available  
Maximum Ratings  
Symbol  
VDSS  
Value  
Units  
V
Drain - Source Voltage  
-200  
Continuous  
transient  
±20  
±30  
Gate – Source Voltage  
VGS  
V
Max. Continuous Drain Current  
Max. Instantaneous Drain Current (Tj limited)  
Max. Avalanche current  
@ TC = 25ºC  
@ TC = 25ºC  
ID1  
ID3  
A
A
25  
95  
25  
IAR  
A
Repetitive Avalanche Energy  
Total Power Dissipation  
EAR  
mJ  
W
ºC  
30  
@ TC = 25ºC  
PD  
250  
Operating & Storage Temperature  
TOP & TSTG  
-55 to +150  
0.83  
0.6 typical  
Maximum Thermal Resistance  
R0JC  
ºC/W  
Junction to Case  
NOTES:  
SMD 2 Isolated  
TO-254  
1/ For ordering information, price, operating curves, and  
availability- Contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows  
available on request.  
3/ Unless otherwise specified, all electrical characteristics  
@25ºC.  
NOTE: SEE DASH# DEFINITION TABLE  
FOR AVAILABLE LEAD FORMING  
CONFIGURATION  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0009B  
DOC  

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