生命周期: | Active | 包装说明: | SMALL OUTLINE, R-XDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 25 A |
最大漏源导通电阻: | 0.15 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF272 | INFINEON |
获取价格 |
Optoelectronic Device | |
SFF273 | INFINEON |
获取价格 |
Optoelectronic Device | |
SFF27N50M | SSDI |
获取价格 |
Avalanche Rated N-channel MOSFET | |
SFF27N50MDB | SSDI |
获取价格 |
Transistor | |
SFF27N50MDBS | SSDI |
获取价格 |
Transistor | |
SFF27N50MDBTX | SSDI |
获取价格 |
Transistor | |
SFF27N50MDBTXV | SSDI |
获取价格 |
Transistor | |
SFF27N50MS | SSDI |
获取价格 |
Transistor | |
SFF27N50MTX | SSDI |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 500V, 0.175ohm, 1-Element, N-Channel, Silicon, Me | |
SFF27N50MTXV | SSDI |
获取价格 |
Transistor |