SFF25P20 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
25 AMP / 200 Volts
150 mΩ typical
Part Number/Ordering Information 1/
P-Channel MOSFET
SFF25P20
___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
└
└
Features:
polySi gate cell structure
•
S = S Level
Package 2/
•
•
•
•
•
Low ON-resistance
UIS (unclamped inductive switching) rated
Hermetically Sealed, Isolated Package
Low package inductance
Stress relief provided by flexible leads –
several options available
S2I = SMD2 Isolated
M = TO-254
•
•
Improved (RDS(ON) QG) figure of merit
TX, TXV, S-Level screening available
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
-200
Continuous
transient
±20
±30
Gate – Source Voltage
VGS
V
Max. Continuous Drain Current
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
@ TC = 25ºC
@ TC = 25ºC
ID1
ID3
A
A
25
95
25
IAR
A
Repetitive Avalanche Energy
Total Power Dissipation
EAR
mJ
W
ºC
30
@ TC = 25ºC
PD
250
Operating & Storage Temperature
TOP & TSTG
-55 to +150
0.83
0.6 typical
Maximum Thermal Resistance
R0JC
ºC/W
Junction to Case
NOTES:
SMD 2 Isolated
TO-254
1/ For ordering information, price, operating curves, and
availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, all electrical characteristics
@25ºC.
NOTE: SEE DASH# DEFINITION TABLE
FOR AVAILABLE LEAD FORMING
CONFIGURATION
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC