Datasheet > SFF25P20S2I-02

SFF25P20S2I-02

更新时间： 2024-11-16 07:26:43

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	123K
描述
Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD21, 3 PIN

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SFF25P20S2I-02 数据手册

SFF25P20 Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

25 AMP / 200 Volts

150 mΩ typical

Part Number/Ordering Information ^1/

P-Channel MOSFET

SFF25P20

___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

Features:

polySi gate cell structure

•

S = S Level

Package ^2/

•

Low ON-resistance

UIS (unclamped inductive switching) rated

Hermetically Sealed, Isolated Package

Low package inductance

Stress relief provided by flexible leads –

several options available

S2I = SMD2 Isolated

M = TO-254

•

Improved (R_DS(ON)Q_G) figure of merit

TX, TXV, S-Level screening available

Maximum Ratings

Symbol

V_DSS

Value

Units

Drain - Source Voltage

-200

Continuous

transient

±20

±30

Gate – Source Voltage

V_GS

Max. Continuous Drain Current

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

@ T_C= 25ºC

I_D1

I_D3

I_AR

Repetitive Avalanche Energy

Total Power Dissipation

E_AR

ºC

@ T_C= 25ºC

P_D

250

Operating & Storage Temperature

T_OP& T_STG

-55 to +150

0.83

0.6 typical

Maximum Thermal Resistance

R_0JC

ºC/W

Junction to Case

NOTES:

SMD 2 Isolated

TO-254

1/ For ordering information, price, operating curves, and

availability- Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ Unless otherwise specified, all electrical characteristics

@25ºC.

NOTE: SEE DASH# DEFINITION TABLE

FOR AVAILABLE LEAD FORMING

CONFIGURATION

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0009B

DOC

12 3

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