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SDU02N60A PDF预览

SDU02N60A

更新时间: 2024-11-06 20:00:31
品牌 Logo 应用领域
三合微科 - SAMHOP /
页数 文件大小 规格书
8页 278K
描述
Transistor

SDU02N60A 数据手册

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Green  
Product  
SDU/D02N60A  
Preliminary  
a
S mHop Microelectronics Corp.  
600V N-Channel Planar MOSFET  
PRODUCT SUMMARY  
FEATURES  
Low Crss (typical 3pF).  
RDS(ON) (m) Max  
VDSS  
600V  
ID  
Fast Switching.  
100% Avalanche Rated.  
2A  
4.4 @ VGS=10V,ID=1A  
G
S
STU SERIES  
STD SERIES  
TO - 252(D-PAK)  
TO - 251(I-PAK)  
°
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted  
)
(
Symbol  
VDSS  
Parameter  
Units  
Max.  
600  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
30  
2
°
TC=25 C  
A
ID  
Continuous Drain Curren  
°
TC=100 C  
A
1.2  
8
a
b
IDM  
A
Pulsed Drain Current, VGS=10V  
Single Pulse Avalanche Energy  
EAS  
dv/dt  
mJ  
106  
c
4.5  
42  
V/ns  
W
Peak Diode Recovery Energy  
°
TC=25 C  
Power Dissipation  
PD  
°
TC>25 C  
Linear Derating Factor  
W/°C  
°C  
0.33  
Operating and Storage Temperature Range  
-55 to 150  
TJ, TSTG  
THERMAL CHARACTERISTICS  
R
3
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
°C/W  
°C/W  
JC  
JA  
R
50  
Details are subject to change without notice.  
Jul,22,2009  
www.samhop.com.tw  
1

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