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SDU20N03L PDF预览

SDU20N03L

更新时间: 2024-11-06 03:32:55
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 801K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

SDU20N03L 数据手册

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SDU/D20N03L  
SamHop Microelectronics Corp.  
July 2004 ver1.2  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
PRODUCT SUMMARY  
FEATURES  
Super high dense cell design for low RDS(ON).  
Rugged and reliable.  
VDSS  
ID  
RDS(ON) ( m  
)
Max  
15 @ VGS = 10V  
32 @ VGS = 4.5V  
30V  
35A  
TO-252 and TO-251 Package.  
D
D
G
S
G
SDU SERIES  
TO-252AA(D-PAK)  
SDD SERIES  
TO-251(l-PAK)  
S
ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)  
C
Limit  
30  
Unit  
V
Parameter  
Symbol  
Drain-Source Voltage  
VDS  
VGS  
V
Gate-Source Voltage  
20  
I
D
35  
A
Drain Current-Continuous @TJ=125 C  
a
-Pulsed  
I
DM  
87  
A
Drain-Source Diode Forward Current  
20  
I
S
A
W
C
50  
P
D
Maximum Power Dissipation  
@Tc=25 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-55 to 175  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
C/W  
C/W  
R
R
JC  
JA  
3
50  
Thermal Resistance, Junction-to-Ambient  
1

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