Datasheet > SDU30N02

SDU30N02

更新时间： 2024-11-06 03:30:51

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	863K
描述
N-Channel E nhancement Mode Field Effect Transistor

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数据手册

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SDU30N02 数据手册

S DU/D30N02

S amHop Microelectronics C orp.

May,2004 ver1.1

N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

20 @ VG S = 4.5V

20V

25A

TO-252 and TO-251 P ackage.

S DU S E R IE S

TO-252AA(D-P AK)

S DD S E R IE S

TO-251(l-P AK)

ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =125 C

-P ulsed

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ Tc=25 C

Operating and S torage Temperature R ange

, TS TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6 7 8

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